* low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. FEATURES
* High hFE and low VCE(sat): hFE ≥ 100 (VCE
2SC4550
191.96 KB
Silicon power transistor.
DATA SHEET
SILICON POWER TRANSISTOR
2SC4550
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SC4550 is a power transistor developed for.
📁 Related Datasheet
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2SC4551 - NPN Transistor
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DATA SHEET
SILICON POWER TRANSISTOR
2SC4551
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SC4551 is a power transistor developed f.
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(NEC)
DATA SHEET
SILICON POWER TRANSISTOR
2SC4552
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SC4552 is a power transistor developed f.
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(SavantIC)
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SavantIC Semiconductor
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(INCHANGE)
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DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min) ·High DC Current Gain-
: hFE= 100(Min)@ (VC.
2SC4552 - SILICON POWER TRANSISTOR
(Renesas)
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor.
