2SD655 Datasheet, Transistor, Renesas

PDF File Details

Part number:

2SD655

Manufacturer:

Renesas ↗

File Size:

146.51kb

Download:

📄 Datasheet

Description:

Silicon npn epitaxial transistor.

TAGS

2SD655

Renesas

📁 Related Datasheet

2SD650 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD650 DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) ·H.

2SD651 - NPN Transistor (INCHANGE)
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD651 DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) ·.

2SD652 - NPN Transistor (INCHANGE)
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD652 DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 500V(Min) ·.

2SD655 - Silicon NPN Transistor (Hitachi Semiconductor)
2SD655 Silicon NPN Epitaxial Application Low frequency power amplifier, Muting Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD655 Abso.

2SD655 - NPN Silicon Transistor (SEMTECH)
ST 2SD655 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, D, E an.

2SD655 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
2SD655 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package. / Features 。 Low frequency. /.

2SD657 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD657 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) ·Excellent.

2SD60 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD60 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 75V(Min) ·Excellent S.

2SD600 - PNP/NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Fe.

2SD600 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 1.0A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good .