2SK2480 Datasheet - Renesas

2SK2480 MOS FIELD EFFECT TRANSISTOR

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: .

2SK2480 Features

* 10.0±0.3

* Low On-Resistance RDS (on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A) 15.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 3±0.1 4±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)

* Total Power Dissipation (Tc = 25 ˚C) To

2SK2480 Datasheet (260.66 KB)