2SK2480 Datasheet - Renesas

MOS FIELD EFFECT TRANSISTOR

2SK2480 Features

* 10.0±0.3

* Low On-Resistance RDS (on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A) 15.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 3±0.1 4±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)

* Total Power Dissipation (Tc = 25 ˚C) To

2SK2480 General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

2SK2480 Datasheet (260.66 KB)

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2SK2480

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Renesas ↗

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260.66 KB

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Mos field effect transistor.
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor.

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2SK2480 MOS FIELD EFFECT TRANSISTOR Renesas

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2SK2480 Features

2SK2480 General Description

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