2SK2480 MOS FIELD EFFECT TRANSISTOR

Renesas

Description

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor.
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: 2SK2480
Manufacturer: Renesas ↗
File Size: 260.66 KB
Datasheet: 2SK2480-Renesas.pdf
Description: MOS FIELD EFFECT TRANSISTOR

Features

* 10.0±0.3
* Low On-Resistance RDS (on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A) 15.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 3±0.1 4±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
* Total Power Dissipation (Tc = 25 ˚C) To

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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2SK2480 MOS FIELD EFFECT TRANSISTOR Renesas

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