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2SK2480 Datasheet, Transistor, Renesas

✔ 2SK2480 Features

10.0±0.3
Low On-Resistance RDS (on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A) 15.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 3±0.1 4±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to S

✔ 2SK2480 Application

or use by the military, including but not limited to the development of weapons of mass destruction. Renesas

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2SK2480

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Description:

Mos field effect transistor. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

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