2SK2485 Datasheet - NEC

2SK2485 N-Channel MOSFET

The 2SK2485 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) 4.7 MAX. 1.5 7.0 1.0±0.2 5.45 4.5±0.2 0.6±0.1 2.8±0.1 1. Gate 2. Drain 3. Source 4. Fin (Drain) * Low On-Resistance RDS (on) = 2.8 Ω (VGS = 10 V, ID = 3..

2SK2485 Features

* 15.7 MAX. 4 3.2±0.2

* Low Ciss Ciss = 1 200 pF TYP.

* High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)

* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (

2SK2485_NEC.pdf