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2SK2569 Silicon N-Channel MOSFET

2SK2569 Description

2SK2569 Silicon N Channel MOS FET REJ03G1018-0300 Rev.3.00 Dec 27, 2006 Application High speed power switching .

2SK2569 Features

* Low on-resistance. RDS(on) = 2.6 Ω max. (at VGS = 4 V, ID = 100 mA) 2.5 V gate drive device. Small package (MPAK). Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) D 3 1 2 G 1. Source 2. Gate 3. Drain S Note: Marking is "ZN
* " Rev.3.

2SK2569 Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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Silicon N-Channel MOSFET Renesas
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