BCR12CM-16LH Datasheet, Triac, Renesas

BCR12CM-16LH Features

• Triac
• IT (RMS) : 12 A
• VDRM : 800 V
• IFGTI, IRGTI, IRGT III: 50 mA or 35 mA(IGT item:1) Data Sheet R07DS0261EJ0300 Rev.3.00 Feb. 1, 2019
• Tj: 150°C

PDF File Details

Part number:

BCR12CM-16LH

Manufacturer:

Renesas ↗

File Size:

497.38kb

Download:

📄 Datasheet

Description:

Triac.

BCR12CM-16LH Application

• Applications Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltag

TAGS

BCR12CM-16LH

Renesas

📁 Related Datasheet

BCR12CM-12LA - Triac (Renesas)
BCR12CM-12LA Triac Medium Power Use Features • IT (RMS) : 12 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 Outline REJ03G0297-0300 R.

BCR12CM-12LB - Triac (Renesas)
BCR12CM-12LB 600V - 12A - Triac Medium Power Use Features • IT (RMS) : 12 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III: 30 mA (20 mA) Note6 Data Sheet R.

BCR12CM-12LB - Thyristor (INCHANGE)
isc Thyristors BCR12CM-12LB DESCRIPTION ·With TO-220 packaging ·Operating in 3 quadrants ·High mutation capability ·Minimum Lot-to-Lot variations.

BCR12CM-12LG - Thyristor (INCHANGE)
isc Thyristors BCR12CM-12LG DESCRIPTION ·With TO-220 packaging ·Operating in 3 quadrants ·High mutation capability ·Minimum Lot-to-Lot variations.

BCR12CM - TRIAC (Mitsubishi Electric Semiconductor)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR12CM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR12CM OUTLINE DRAWING 10.5 MAX 3.2±0.2 Dim.

BCR12CM - Triac (Powerex Power Semiconductors)
BCR12CM Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 Triac 12 Amperes/400-600 Volts OUTLINE DRAWING C  D .

BCR12CS - TRIAC (Mitsubishi Electric Semiconductor)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR12CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR12CS OUTLINE DRAWING Dimensions in mm 4 .

BCR12CS-12LB - Triac (Renesas)
BCR12CS-12LB Triac Medium Power Use Features  IT (RMS) : 12 A  VDRM : 600 V  IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 Outline Preliminary Datas.

BCR129 - NPN Silicon Digital Transistor (Siemens Semiconductor Group)
BCR 129 NPN Silicon Digital Transistor Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=.

BCR129 - NPN Silicon Digital Transistor (Infineon Technologies AG)
BCR129 /SEMH4 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=10kΩ) • F.