BCR12CS
Mitsubishi Electric Semiconductor
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Triac.
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BCR12CM - TRIAC
(Mitsubishi Electric Semiconductor)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR12CM
OUTLINE DRAWING
10.5 MAX
3.2±0.2
Dim.
BCR12CM - Triac
(Powerex Power Semiconductors)
BCR12CM
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272
Triac
12 Amperes/400-600 Volts
OUTLINE DRAWING
C
D
.
BCR12CM-12LA - Triac
(Renesas)
BCR12CM-12LA
Triac
Medium Power Use
Features
• IT (RMS) : 12 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6
Outline
REJ03G0297-0300 R.
BCR12CM-12LB - Triac
(Renesas)
BCR12CM-12LB
600V - 12A - Triac
Medium Power Use
Features
• IT (RMS) : 12 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III: 30 mA (20 mA) Note6
Data Sheet
R.
BCR12CM-12LB - Thyristor
(INCHANGE)
isc Thyristors
BCR12CM-12LB
DESCRIPTION ·With TO-220 packaging ·Operating in 3 quadrants ·High mutation capability ·Minimum Lot-to-Lot variations.
BCR12CM-12LG - Thyristor
(INCHANGE)
isc Thyristors
BCR12CM-12LG
DESCRIPTION ·With TO-220 packaging ·Operating in 3 quadrants ·High mutation capability ·Minimum Lot-to-Lot variations.
BCR12CM-16LH - Triac
(Renesas)
BCR12CM-16LH
800V - 12A - Triac
Medium Power Use
Features
• IT (RMS) : 12 A • VDRM : 800 V • IFGTI, IRGTI, IRGT III: 50 mA or 35 mA(IGT item:1)
Data .
BCR12CS-12LB - Triac
(Renesas)
BCR12CS-12LB
Triac Medium Power Use
Features
IT (RMS) : 12 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6
Outline
Preliminary Datas.
BCR129 - NPN Silicon Digital Transistor
(Siemens Semiconductor Group)
BCR 129
NPN Silicon Digital Transistor Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=.
BCR129 - NPN Silicon Digital Transistor
(Infineon Technologies AG)
BCR129 /SEMH4
NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=10kΩ) • F.
