Description
The N6006NZ is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Low on-state resistance RDS (on) = 1.2Ω MAX. (VGS = 10 V, ID = 3.0 A).
- Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V).
- High current ID(DC) = ±6.0 A.
- RoHS Compliant
Ordering Information
Part No. N6006NZ-S17-AY ∗1
Lead Plating Pure Sn (Tin)
Tube
Packing
50 p/tube
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode. )
Package Isolated TO-220 1.95g TYP. Absolute Maximum Ratings (TA = 25°C, all terminals are conne.
N6006NZ-Renesas.pdf
