* TrenchFET® power MOSFET
* 100 % Rg and UIS tested D1 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Curren
N6066SD
VBsemi
233.70 KB
Dual n-channel mosfet.
N6066SD-VB www.VBsemi.com N6066SD-VB Datasheet Dual N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω.
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