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R1RW0404DGE-2LR, R1RW0404D Datasheet - Renesas

R1RW0404D-Renesas.pdf

This datasheet PDF includes multiple part numbers: R1RW0404DGE-2LR, R1RW0404D. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

R1RW0404DGE-2LR, R1RW0404D

Manufacturer:

Renesas ↗

File Size:

167.89 KB

Description:

4m high speed sram.

Note:

This datasheet PDF includes multiple part numbers: R1RW0404DGE-2LR, R1RW0404D.
Please refer to the document for exact specifications by model.

R1RW0404DGE-2LR, R1RW0404D, 4M High Speed SRAM

The R1RW0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit.

It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.

It is most appropriate for the application which requires high speed and high density me

R1RW0404DGE-2LR Features

* Single supply: 3.3 V ± 0.3 V

* Access time: 12 ns (max)

* Completely static memory  No clock or timing strobe required

* Equal access and cycle times

* Directly TTL compatible  All inputs and outputs

* Operating current: 100 mA (max)

* TTL

R1RW0404DGE-2LR Distributor

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