R1RW0404DGE-2LR, R1RW0404D Datasheet - Renesas

R1RW0404DGE-2LR 4M High Speed SRAM

The R1RW0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density me.

R1RW0404DGE-2LR Features

* Single supply: 3.3 V ± 0.3 V

* Access time: 12 ns (max)

* Completely static memory  No clock or timing strobe required

* Equal access and cycle times

* Directly TTL compatible  All inputs and outputs

* Operating current: 100 mA (max)

* TTL

R1RW0404D-Renesas.pdf