R1RW0408DGE-2PI, R1RW0408DI - 4M High Speed SRAM

Renesas

Datasheet Details

Part number	R1RW0408DGE-2PI, R1RW0408DI
Manufacturer	Renesas
File Size	360.55 KB
Description	4M High Speed SRAM
Datasheet	R1RW0408DI-Renesas.pdf
Note	This datasheet PDF includes multiple part numbers: R1RW0408DGE-2PI, R1RW0408DI. Please refer to the document for exact specifications by model.

The R1RW0408DI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit.

Single 3.3V supply: 3.3V ± 0.3V.
Access time: 12ns (max).
Completely static memory ⎯ No clock or timing strobe required.
Equal access and cycle times.
Directly TTL compatible ⎯ All inputs and outputs.
Operating current: 100mA (max).
TTL standby current: 40mA (max).
CMOS standby current : 5mA (max).
Temperature range:.
40 to +85°C Ordering Information Type No. R1RW0408DGE-2PI Access time 12ns Package 400-m.

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Published: Aug 5, 2020 |