RBN100N180S2HFWA Datasheet - Renesas

RBN100N180S2HFWA IGBT

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RBN100N180S2HFWA Features

* Renesas generation 8th Trench IGBT

* Short circuit withstands time (10 s min.)

* Optimized for high power application

* Unsawn wafer Wafer size = 200 mm

* Quality grade: Standard Outline Datasheet R07DS1455EJ0100 Rev.1.00 Apr 11th, 2023 wafer 1.Gate 2.Collector(The back) 3.E

RBN100N180S2HFWA-Renesas.pdf