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RBN40H125S1FPQ-A0 IGBT

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Description

RBN40H125S1FPQ-A0 1250V - 40A - IGBT Power Switching Datasheet R07DS1380EJ0141 Rev.1.41 Oct.14.2021 .

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Features

* Trench gate and thin wafer technology (G8H series)
* High speed switching
* Built in fast recovery diode in one package
* Short circuit withstands time (10 µs min. )
* Low collector to emitter saturation voltage

Applications

* UPS, Welding, photovoltaic VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C) inverters, Power converter system
* Quality grade: Standard Key Performance Type RBN40H125S1FPQ-A0 VCES 1250 V IC 40 A VCE(sat), TC=25°C 1.8 V IF 25 A tSC 10µs Tj 175 °C Outline RENESAS Package

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