RBN40H125S1FPQ-A0 Datasheet, Igbt, Renesas

RBN40H125S1FPQ-A0 Features

• Igbt
• Trench gate and thin wafer technology (G8H series)
• High speed switching
• Built in fast recovery diode in one package
• Short circuit withstands t

PDF File Details

Part number:

RBN40H125S1FPQ-A0

Manufacturer:

Renesas ↗

File Size:

308.16kb

Download:

📄 Datasheet

Description:

Igbt.

RBN40H125S1FPQ-A0 Application

• Applications UPS, Welding, photovoltaic VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C) inverters, Power converter system
• Q

TAGS

RBN40H125S1FPQ-A0

Renesas

📁 Related Datasheet

RBN40H65T1FPQ-A0 - IGBT (Renesas)
Datasheet RBN40H65T1FPQ-A0 650V - 40A - IGBT Power Switching R07DS1379EJ0121 Rev.1.21 Oct.14.2021 Features • Trench gate and thin wafer technology.

RBN40N125S1UFWA - IGBT (Renesas)
RBN40N125S1UFWA 1250V - 40A - IGBT Features  Renesas generation 8th Trench IGBT  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (.

RBN40N65T1UFWA - IGBT (Renesas)
RBN40N65T1UFWA 650V - 40A - IGBT Features  Renesas generation 8th Trench IGBT  Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at.

RBN100N180S2HFWA - IGBT (Renesas)
RBN100N180S2HFWA 1800V - 200A/100A - IGBT Features  Renesas generation 8th Trench IGBT  Short circuit withstands time (10 s min.)  Optimized for h.

RBN150N180S2HFWA - IGBT (Renesas)
RBN150N180S2HFWA 1800V - 300A/150A - IGBT Features  Renesas generation 8th Trench IGBT  Short circuit withstands time (10 s min.)  Optimized for h.

RBN200N180S2HFWA - IGBT (Renesas)
RBN200N180S2HFWA 1800V - 400A/200A - IGBT Features  Renesas generation 8th Trench IGBT  Short circuit withstands time (10 s min.)  Optimized for h.

RBN25H125S1FPQ-A0 - IGBT (Renesas)
RBN25H125S1FPQ-A0 1250V - 25A - IGBT Power Switching Datasheet R07DS1378EJ0141 Rev.1.41 Oct.14.2021 Features • Trench gate and thin wafer technolog.

RBN25N125S1UFWA - IGBT (Renesas)
RBN25N125S1UFWA 1250V - 25A - IGBT Features  Renesas generation 8th Trench IGBT  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (.

RBN50H65T1FPQ-A0 - IGBT (Renesas)
Datasheet RBN50H65T1FPQ-A0 650V - 50A - IGBT Power Switching R07DS1381EJ0120 Rev.1.20 Aug.03.2020 Features  Trench gate and thin wafer technology.

RBN75H125S1FP4-A0 - IGBT (Renesas)
Datasheet RBN75H125S1FP4-A0 1250V - 75A - IGBT Power Switching R07DS1382EJ0141 Rev.1.41 Oct.14.2021 Features • Trench gate and thin wafer technolo.