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RBN40N125S1UFWA IGBT

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Description

RBN40N125S1UFWA 1250V - 40A - IGBT .

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Features

* Renesas generation 8th Trench IGBT
* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25 C)
* High speed switching
* Short circuit withstands time (10 s min. )

Applications

* UPS, Welding, photovoltaic inverters, Power converter system
* Unsawn wafer Wafer size = 200 mm
* Quality grade: Standard Datasheet R07DS1500EJ0120 Rev.1.20 Oct.18th.2024 Key performance Product name RBN40N125S1UFWA VCES 1250 V IC 40 A Die size 33.28 mm2 (5.20 mm x 6.40 mm) Package Un

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