RBN40N125S1UFWA Datasheet - Renesas

RBN40N125S1UFWA IGBT

RBN40N125S1UFWA Features

* Renesas generation 8th Trench IGBT

* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25 C)

* High speed switching

* Short circuit withstands time (10 s min.)

* Applications: UPS, Welding, photovoltaic inverters, Power converte

Datasheet Details

RBN40N125S1UFWA

140.00 KB

Igbt.

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