RBN40N125S1UFWA Datasheet, Igbt, Renesas

RBN40N125S1UFWA Features

• Igbt
• Renesas generation 8th Trench IGBT
• Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25 C)
• High speed swit

PDF File Details

Part number:

RBN40N125S1UFWA

Manufacturer:

Renesas ↗

File Size:

140.00kb

Download:

📄 Datasheet

Description:

Igbt.

RBN40N125S1UFWA Application

• Applications UPS, Welding, photovoltaic inverters, Power converter system
• Unsawn wafer Wafer size = 200 mm
• Quality grade: Stand

TAGS

RBN40N125S1UFWA

Renesas

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