RBN40N125S1UFWA - IGBT

Renesas

Datasheet Details

Renesas generation 8th Trench IGBT.
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25 C).
High speed switching.
Short circuit withstands time (10 s min. ).

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Published: Jan 17, 2025 |