Part number:
RBN40N65T1UFWA
Manufacturer:
File Size:
138.75 KB
Description:
Igbt.
RBN40N65T1UFWA Datasheet (138.75 KB)
* Renesas generation 8th Trench IGBT
* Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25 C)
* High speed switching
* Applications: UPS, Welding, photovoltaic inverters, Power converter system
* Unsawn wafer Wafer size: 200 mm
RBN40N65T1UFWA Datasheet (138.75 KB)
RBN40N65T1UFWA
138.75 KB
Igbt.
📁 Related Datasheet
RBN40N125S1UFWA - IGBT
(Renesas)
RBN40N125S1UFWA
1250V - 40A - IGBT
Features
Renesas generation 8th Trench IGBT Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (.
RBN40H125S1FPQ-A0 - IGBT
(Renesas)
RBN40H125S1FPQ-A0
1250V - 40A - IGBT Power Switching
Datasheet
R07DS1380EJ0141 Rev.1.41
Oct.14.2021
Features
• Trench gate and thin wafer technolog.
RBN40H65T1FPQ-A0 - IGBT
(Renesas)
Datasheet
RBN40H65T1FPQ-A0
650V - 40A - IGBT Power Switching
R07DS1379EJ0121 Rev.1.21
Oct.14.2021
Features
• Trench gate and thin wafer technology.
RBN100N180S2HFWA - IGBT
(Renesas)
RBN100N180S2HFWA
1800V - 200A/100A - IGBT
Features
Renesas generation 8th Trench IGBT Short circuit withstands time (10 s min.) Optimized for h.
RBN150N180S2HFWA - IGBT
(Renesas)
RBN150N180S2HFWA
1800V - 300A/150A - IGBT
Features
Renesas generation 8th Trench IGBT Short circuit withstands time (10 s min.) Optimized for h.
RBN200N180S2HFWA - IGBT
(Renesas)
RBN200N180S2HFWA
1800V - 400A/200A - IGBT
Features
Renesas generation 8th Trench IGBT Short circuit withstands time (10 s min.) Optimized for h.
RBN25H125S1FPQ-A0 - IGBT
(Renesas)
RBN25H125S1FPQ-A0
1250V - 25A - IGBT Power Switching
Datasheet
R07DS1378EJ0141 Rev.1.41
Oct.14.2021
Features
• Trench gate and thin wafer technolog.
RBN25N125S1UFWA - IGBT
(Renesas)
RBN25N125S1UFWA
1250V - 25A - IGBT
Features
Renesas generation 8th Trench IGBT Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (.
