RBN40N65T1UFWA Datasheet (Renesas)

RBN40N65T1UFWA, IGBT

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RBN40N65T1UFWA Features

* Renesas generation 8th Trench IGBT

* Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25 C)

* High speed switching

* Applications: UPS, Welding, photovoltaic inverters, Power converter system

* Unsawn wafer Wafer size: 200 mm