RBN40N65T1UFWA Datasheet, Igbt, Renesas

RBN40N65T1UFWA Features

• Igbt
• Renesas generation 8th Trench IGBT
• Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25 C)
• High speed swit

PDF File Details

Part number:

RBN40N65T1UFWA

Manufacturer:

Renesas ↗

File Size:

138.75kb

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📄 Datasheet

Description:

Igbt. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

RBN40N65T1UFWA Application

• Applications UPS, Welding, photovoltaic inverters, Power converter system
• Unsawn wafer Wafer size: 200 mm
• Quality grade: Standa

TAGS

RBN40N65T1UFWA

Renesas

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