RBN40N65T1UFWA - IGBT

Renesas

RBN40N65T1UFWA Datasheet Preview — Preview of RBN40N65T1UFWA PDF

Datasheet Details

Part number	RBN40N65T1UFWA
Manufacturer	Renesas ↗
File Size	138.75 KB
Description	IGBT
Datasheet	RBN40N65T1UFWA-Renesas.pdf

RBN40N65T1UFWA Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.You are fully responsible for the incorporat

Features

Renesas generation 8th Trench IGBT.
Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25 C).
High speed switching.

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Published: Jan 17, 2025 |