RJH60M1DPE - IGBT

Product Overview

Renesas

Datasheet Details

Part number	RJH60M1DPE
Manufacturer	Renesas
File Size	110.66 KB
Description	IGBT
Datasheet	RJH60M1DPE Datasheet
Additional preview pages of the RJH60M1DPE datasheet.

Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Short circuit withstand time (8 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode (100 ns typ. ) in one package.
Trench gate and thin wafer technology.
High speed switching tf = 80 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 , inductive load) R07DS0529EJ0100 Rev.1.00 Sep 02, 2011 Outline.

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Published: Jul 20, 2012 |