RJH60M1DPE

IGBT

Renesas

RJH60M1DPE Features

* Short circuit withstand time (8 s typ.)

* Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)

* Built in fast recovery diode (100 ns typ.) in one package

* Trench gate and thin wafer technology

* High speed switching tf = 80 n

RJH60M1DPE General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJH60M1DPE Datasheet (110.66 KB)