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RJH60M1DPE IGBT

RJH60M1DPE Description

Preliminary Datasheet RJH60M1DPE 600 V - 8 A - IGBT Application: Inverter .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJH60M1DPE Features

* Short circuit withstand time (8 s typ. )
* Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)
* Built in fast recovery diode (100 ns typ. ) in one package
* Trench gate and thin wafer technology
* High speed switching tf = 80 n

RJH60M1DPE Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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