RJH60M1DPE Datasheet, Igbt, Renesas

✔ RJH60M1DPE Features

Short circuit withstand time (8 s typ.)
Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)
Built in fast recove

✔ RJH60M1DPE Application

or use by the military, including but not limited to the development of weapons of mass destruction. Renesas

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RJH60M1DPE

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📄 Datasheet

Description:

Igbt. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

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Stock and price

Renesas Electronics Corporation

IGBT TRENCH 600V 16A LDPAK

DigiKey

RJH60M1DPE-00-J3

1000 In Stock

Qty : 2000 units

Unit Price : $0.9

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RJH60M1DPE IGBT Renesas