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RJH60M3DPE IGBT

RJH60M3DPE Description

Preliminary Datasheet RJH60M3DPE 600 V - 17 A - IGBT Application: Inverter .

RJH60M3DPE Features

* Short circuit withstand time (8 s typ. )
* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)
* Built in fast recovery diode (100 ns typ. ) in one package
* Trench gate and thin wafer technology
* High speed switching tf = 80

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