RJH60M3DPE Datasheet - Renesas

IGBT

* Short circuit withstand time (8 s typ.)

* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)

* Built in fast recovery diode (100 ns typ.) in one package

* Trench gate and thin wafer technology

* High speed switching tf = 80

RJH60M3DPE

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Igbt.

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