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RJH60M3DPE - IGBT

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Renesas

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RJH60M3DPE IGBT by Renesas - Datasheet Preview — Datasheet preview – RJH60M3DPE

Datasheet Details

Part number	RJH60M3DPE
Manufacturer	Renesas
File Size	97.58 KB
Description	IGBT
Datasheet	RJH60M3DPE Datasheet
Additional preview pages of the RJH60M3DPE datasheet.

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Features

Short circuit withstand time (8 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode (100 ns typ. ) in one package.
Trench gate and thin wafer technology.
High speed switching tf = 80 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 17 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0533EJ0100 Rev.1.00 Sep 02, 2011 Outline.

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Published: Jul 20, 2012 |