Datasheet4U Logo Datasheet4U.com

RJH60M3DPQ-A0 Datasheet - Renesas

IGBT

RJH60M3DPQ-A0 Features

* Short circuit withstand time (8 s typ.)

* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)

* Built in fast recovery diode (100 ns typ.) in one package

* Trench gate and thin wafer technology

* High speed switching tf = 80

RJH60M3DPQ-A0 General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJH60M3DPQ-A0 Datasheet (110.66 KB)

Preview of RJH60M3DPQ-A0 PDF

Datasheet Details

Part number:

RJH60M3DPQ-A0

Manufacturer:

Renesas ↗

File Size:

110.66 KB

Description:

Igbt.

📁 Related Datasheet

RJH60M3DPE IGBT (Renesas)

RJH60M3DPP-M0 IGBT (Renesas)

RJH60M0DPQ-A0 IGBT (Renesas)

RJH60M1DPE IGBT (Renesas)

RJH60M1DPP-M0 IGBT (Renesas)

RJH60M2DPE IGBT (Renesas)

RJH60M2DPP-M0 IGBT (Renesas)

RJH60M5DPQ-A0 IGBT (Renesas)

RJH60M6DPQ-A0 IGBT (Renesas)

RJH60M7DPQ-A0 IGBT (Renesas)

TAGS

RJH60M3DPQ-A0 IGBT Renesas

Image Gallery

RJH60M3DPQ-A0 Datasheet Preview Page 2 RJH60M3DPQ-A0 Datasheet Preview Page 3

RJH60M3DPQ-A0 Distributor