Part number:
RJK1008DPE
Manufacturer:
File Size:
164.12 KB
Description:
N-channel power mosfet.
RJK1008DPE Datasheet (164.12 KB)
* VDSS : 100 V
* RDS(on) : 11 mΩ (Max)
* ID : 80 A Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 1. Gate 2. Drain 3. Source 4. Drain 2, 4 D 1 1 G 2 3 S 3 www.DataSheet.co.kr Application
* Motor control, Lighting control, Solenoid con
RJK1008DPE Datasheet (164.12 KB)
RJK1008DPE
164.12 KB
N-channel power mosfet.
📁 Related Datasheet
RJK1008DPN - N-Channel Power MOSFET
(Renesas)
RJK1008DPN
N-Channel Power MOSFET High-Speed Switching Use
REJ03G1627-0100 Rev.1.00 Mar 21, 2008
Features
• VDSS : 100 V • RDS(on) : 11 mΩ (Max) • ID.
RJK1008DPP - N-Channel Power MOSFET
(Renesas)
RJK1008DPP
N-Channel Power MOSFET High-Speed Switching Use
REJ03G1708-0100 Rev.1.00 Jul 03, 2008
Features
• VDSS : 100 V • RDS(on) : 11 mΩ (Max) • ID.
RJK1001DPN-E0 - N-Channel MOSFET
(Renesas Technology)
RJK1001DPN-E0
N-Channel MOS FET 100 V, 80 A, 5.5 m
Features
High speed switching Low drive current Low on-resistance RDS(on) = 4.4 m typ. (at .
RJK1002DPN-E0 - N-Channel MOS FET
(Renesas Technology)
RJK1002DPN-E0
N-Channel MOS FET 100 V, 70 A, 7.6 m
Features
High speed switching Low drive current Low on-resistance RDS(on) = 6.0 m typ. (at .
RJK1003DPN-E0 - N-Channel MOSFET
(Renesas)
RJK1003DPN-E0
N-Channel MOS FET 100 V, 50 A, 11 m
Features
High speed switching Low drive current Low on-resistance RDS(on) = 8.8 m typ. (at V.
RJK1021DPE - N-Channel Power MOSFET
(Renesas)
RJK1021DPE
N-Channel Power MOSFET High-Speed Switching Use
REJ03G1630-0100 Rev.1.00 Apr 03, 2008
Features
• VDSS : 100 V • RDS(on) : 20 mΩ (Max) • ID.
RJK1021DPN - N-Channel 100V MOSFET
(VBsemi)
RJK1021DPN-VB
RJK1021DPN-VB Datasheet
N-Channel 100-V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
100
0.017 at VGS = 10.
RJK1021DPN - N-Channel Power MOSFET
(Renesas)
RJK1021DPN
N-Channel Power MOSFET High-Speed Switching Use
REJ03G1628-0100 Rev.1.00 Apr 02, 2008
Features
• VDSS : 100 V • RDS(on) : 20 mΩ (Max) • ID.
