Datasheet4U Logo Datasheet4U.com

RJK1001DPN-E0

N-Channel MOSFET

RJK1001DPN-E0 Features

* High speed switching

* Low drive current

* Low on-resistance RDS(on) = 4.4 m typ. (at VGS = 10 V)

* Package TO-220AB Outline RENESAS Package code: PRSS0004AG-A (Package name: TO-220AB) 4 123 1G Preliminary Datasheet R07DS0619EJ0200 Rev.2.00 Aug 24, 2012 2, 4 D 1. Gate 2. Drain

RJK1001DPN-E0 General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK1001DPN-E0 Datasheet (77.77 KB)

Preview of RJK1001DPN-E0 PDF

Datasheet Details

Part number:

RJK1001DPN-E0

Manufacturer:

Renesas ↗ Technology

File Size:

77.77 KB

Description:

N-channel mosfet.

📁 Related Datasheet

RJK1002DPN-E0 - N-Channel MOS FET (Renesas Technology)
RJK1002DPN-E0 N-Channel MOS FET 100 V, 70 A, 7.6 m Features  High speed switching  Low drive current  Low on-resistance RDS(on) = 6.0 m typ. (at .

RJK1003DPN-E0 - N-Channel MOSFET (Renesas)
RJK1003DPN-E0 N-Channel MOS FET 100 V, 50 A, 11 m Features  High speed switching  Low drive current  Low on-resistance RDS(on) = 8.8 m typ. (at V.

RJK1008DPE - N-Channel Power MOSFET (Renesas)
RJK1008DPE N-Channel Power MOSFET High-Speed Switching Use REJ03G1629-0100 Rev.1.00 Apr 03, 2008 Features • VDSS : 100 V • RDS(on) : 11 mΩ (Max) • ID.

RJK1008DPN - N-Channel Power MOSFET (Renesas)
RJK1008DPN N-Channel Power MOSFET High-Speed Switching Use REJ03G1627-0100 Rev.1.00 Mar 21, 2008 Features • VDSS : 100 V • RDS(on) : 11 mΩ (Max) • ID.

RJK1008DPP - N-Channel Power MOSFET (Renesas)
RJK1008DPP N-Channel Power MOSFET High-Speed Switching Use REJ03G1708-0100 Rev.1.00 Jul 03, 2008 Features • VDSS : 100 V • RDS(on) : 11 mΩ (Max) • ID.

RJK1021DPE - N-Channel Power MOSFET (Renesas)
RJK1021DPE N-Channel Power MOSFET High-Speed Switching Use REJ03G1630-0100 Rev.1.00 Apr 03, 2008 Features • VDSS : 100 V • RDS(on) : 20 mΩ (Max) • ID.

RJK1021DPN - N-Channel 100V MOSFET (VBsemi)
RJK1021DPN-VB RJK1021DPN-VB Datasheet N-Channel 100-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.017 at VGS = 10.

RJK1021DPN - N-Channel Power MOSFET (Renesas)
RJK1021DPN N-Channel Power MOSFET High-Speed Switching Use REJ03G1628-0100 Rev.1.00 Apr 02, 2008 Features • VDSS : 100 V • RDS(on) : 20 mΩ (Max) • ID.

TAGS

RJK1001DPN-E0 N-Channel MOSFET Renesas Technology

Image Gallery

RJK1001DPN-E0 Datasheet Preview Page 2 RJK1001DPN-E0 Datasheet Preview Page 3

RJK1001DPN-E0 Distributor