RJK1001DPN-E0 Datasheet, Mosfet, Renesas Technology

RJK1001DPN-E0 Features

• Mosfet
• High speed switching
• Low drive current
• Low on-resistance RDS(on) = 4.4 m typ. (at VGS = 10 V)
• Package TO-220AB Outline RENESAS Package code: PRS

PDF File Details

Part number:

RJK1001DPN-E0

Manufacturer:

Renesas ↗ Technology

File Size:

77.77kb

Download:

📄 Datasheet

Description:

N-channel mosfet. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

RJK1001DPN-E0 Application

• Applications for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipmen

TAGS

RJK1001DPN-E0

Renesas Technology

📁 Related Datasheet

RJK1002DPN-E0 - N-Channel MOS FET (Renesas Technology)
RJK1002DPN-E0 N-Channel MOS FET 100 V, 70 A, 7.6 m Features  High speed switching  Low drive current  Low on-resistance RDS(on) = 6.0 m typ. (at .

RJK1003DPN-E0 - N-Channel MOSFET (Renesas)
RJK1003DPN-E0 N-Channel MOS FET 100 V, 50 A, 11 m Features  High speed switching  Low drive current  Low on-resistance RDS(on) = 8.8 m typ. (at V.

RJK1008DPE - N-Channel Power MOSFET (Renesas)
RJK1008DPE N-Channel Power MOSFET High-Speed Switching Use REJ03G1629-0100 Rev.1.00 Apr 03, 2008 Features • VDSS : 100 V • RDS(on) : 11 mΩ (Max) • ID.

RJK1008DPN - N-Channel Power MOSFET (Renesas)
RJK1008DPN N-Channel Power MOSFET High-Speed Switching Use REJ03G1627-0100 Rev.1.00 Mar 21, 2008 Features • VDSS : 100 V • RDS(on) : 11 mΩ (Max) • ID.

RJK1008DPP - N-Channel Power MOSFET (Renesas)
RJK1008DPP N-Channel Power MOSFET High-Speed Switching Use REJ03G1708-0100 Rev.1.00 Jul 03, 2008 Features • VDSS : 100 V • RDS(on) : 11 mΩ (Max) • ID.

RJK1021DPE - N-Channel Power MOSFET (Renesas)
RJK1021DPE N-Channel Power MOSFET High-Speed Switching Use REJ03G1630-0100 Rev.1.00 Apr 03, 2008 Features • VDSS : 100 V • RDS(on) : 20 mΩ (Max) • ID.

RJK1021DPN - N-Channel 100V MOSFET (VBsemi)
RJK1021DPN-VB RJK1021DPN-VB Datasheet N-Channel 100-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.017 at VGS = 10.

RJK1021DPN - N-Channel Power MOSFET (Renesas)
RJK1021DPN N-Channel Power MOSFET High-Speed Switching Use REJ03G1628-0100 Rev.1.00 Apr 02, 2008 Features • VDSS : 100 V • RDS(on) : 20 mΩ (Max) • ID.

RJK1028DNS - N-Channel Power MOSFET (Renesas)
Preliminary Datasheet RJK1028DNS Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive .

RJK1028DSP - N-Channel Power MOSFET (Renesas)
Preliminary Datasheet RJK1028DSP Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive .