RJK0206DPA Silicon N Channel Power MOS FET

Renesas Technology

Description

Preliminary www.DataSheet4U.com Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200 Power Switching Rev..
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: RJK0206DPA
Manufacturer: Renesas ↗ Technology
File Size: 106.53 KB
Datasheet: RJK0206DPA_RenesasTechnology.pdf
Description: Silicon N Channel Power MOS FET

Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 V)
* Pb-free
* Halogen-free
* Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 5 6 7 8

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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RJK0206DPA Silicon Channel Power MOS FET Renesas Technology

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