RJK0206DPA - Silicon N Channel Power MOS FET

Renesas Technology

RJK0206DPA Datasheet Preview — Preview of RJK0206DPA PDF

Datasheet Details

Part number	RJK0206DPA
Manufacturer	Renesas ↗ Technology
File Size	106.53 KB
Description	Silicon N Channel Power MOS FET
Datasheet	RJK0206DPA_RenesasTechnology.pdf

RJK0206DPA Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 V).
Pb-free.
Halogen-free.
Outline.

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Published: Jul 23, 2010 |