RJK0211DPA Datasheet - Renesas Technology

N-Channel MOSFET

RJK0211DPA Features

* Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.8 m typ. (at VGS = 10 V)

* Pb-free

* Halogen-free REJ03G1949-0021 Rev.0.21 Jul 02, 2010 Outline RENESAS Package code: PWSN0008DC-A (Pack

RJK0211DPA General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK0211DPA Datasheet (85.35 KB)