RJK0236DPA Datasheet - Renesas

Built in SBD N Channel Power MOS FET

RJK0236DPA Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free R07DS0792EJ0200 Rev.2.00 Mar 22, 2013 Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5 6 7 8 D D D D 5 6 7

RJK0236DPA General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK0236DPA Datasheet (187.12 KB)