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RJK0213DPA

Silicon N Channel Power MOS FET

RJK0213DPA Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.85 m typ. (at VGS = 10 V)

* Pb-free

* Halogen-free

* Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 5 6 7

RJK0213DPA General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK0213DPA Datasheet (178.82 KB)

Preview of RJK0213DPA PDF

Datasheet Details

Part number:

RJK0213DPA

Manufacturer:

Renesas ↗ Technology

File Size:

178.82 KB

Description:

Silicon n channel power mos fet.
Preliminary www.DataSheet4U.com Datasheet RJK0213DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1942-0100 Power Switching Rev..

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RJK0213DPA Silicon Channel Power MOS FET Renesas Technology

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