UPA2521 Datasheet, Transistor, Renesas

UPA2521 Features

• Transistor
• Low on-state resistance RDS(on)1 = 16.5 mΩ MAX. (VGS = 10 V, ID = 8.0 A) RDS(on)2 = 25 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)
• Built-in gate protection diode
• Sma

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Part number:

UPA2521

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Renesas ↗

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📄 Datasheet

Description:

Mos field effect transistor. The μ PA2521 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equi

UPA2521 Application

• Applications of portable equipments. PACKAGE DRAWING (Unit: mm) 2.9±0.1 0.65 8 5 A 0.17±0.05 FEATURES
• Low on-state resistance RDS(on

TAGS

UPA2521

Renesas

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