UPA2792AGR Datasheet, Transistor, Renesas

UPA2792AGR Features

• Transistor
• Low on-state resistance N-channel RDS(on)1 = 12.5 mΩ MAX. (VGS = 10 V, ID = 5 A) RDS(on)2 = 21 mΩ MAX. (VGS = 4.5 V, ID = 5 A) P-channel RDS(on)1 = 18 mΩ MAX. (VGS =

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UPA2792AGR

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Renesas ↗

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📄 Datasheet

Description:

Mos field effect transistor. The μ PA2792AGR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application. FEATURES

Low on-stat

TAGS

UPA2792AGR

Renesas

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