2SB1182 Datasheet - Rohm

2SB1182 Medium power Transistor

2SB1182 Features

* 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862.

* Structure Epitaxial planar type PNP silicon transistor

* Dimensions (Unit : mm) 2SB1182 6.5±0.2 5.1+

* 00..21 C0.5 2.3+

* 00..21 0.5±0.1 2SB1240 6.8±0.2 2.5±0.2 4.4±0.2 1.0 0.

Datasheet Details

2SB1182

143.53 KB

Medium power transistor.

📁 Related Datasheet

2SB1180 Silicon PNP Transistor (Panasonic)

2SB1180A Silicon PNP Transistor (Panasonic)

2SB1181 Power Transistor (Rohm)

2SB1181 Power Transistor (Kexin)

2SB1182 Silicon PNP transistor (BLUE ROCKET ELECTRONICS)

2SB1182 Silicon PNP Power Transistor (Inchange Semiconductor)

2SB1182 Medium Power Transistor (Kexin)

2SB1182 PNP PLASTIC ENCAPSULATE TRANSISTORS (Weitron)

TAGS

2SB1182 2SB1182 Medium power Transistor Rohm

2SB1182 Distributor