2SB1182 Datasheet - Rohm

2SB1182 - Medium power Transistor

2SB1182 Features

* 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862.

* Structure Epitaxial planar type PNP silicon transistor

* Dimensions (Unit : mm) 2SB1182 6.5±0.2 5.1+

* 00..21 C0.5 2.3+

* 00..21 0.5±0.1 2SB1240 6.8±0.2 2.5±0.2 4.4±0.2 1.0 0.

Datasheet Details

2SB1182

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Medium power transistor.

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