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2SB1182 - Medium power Transistor

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Rohm

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2SB1182 Medium power Transistor by Rohm - Datasheet Preview — Datasheet preview – 2SB1182

Datasheet Details

Part number	2SB1182
Manufacturer	ROHM
File Size	143.53 KB
Description	Medium power Transistor
Datasheet	2SB1182 Datasheet
Additional preview pages of the 2SB1182 datasheet.

Product details

Features

Low VCE(sat). VCE(sat) = 0.5V (Typ. ) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862.
Structure Epitaxial planar type PNP silicon transistor.
Dimensions (Unit : mm) 2SB1182 6.5±0.2 5.1+.
00..21 C0.5 2.3+.
00..21 0.5±0.1 2SB1240 6.8±0.2 2.5±0.2 4.4±0.2 1.0 0.9 5.5+.
00..31 1.5±0.3 0.9 1.5 2.5 9.5±0.5 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 0.55±0.1 1.0±0.2 (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 0.65Max. 14.5±0.5 0.

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Published: Mar 22, 2005 |