* 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode. !External dimensions (Units : mm) 2SD2212 1.5 0.4 4.0 1.0 2.5 0.5 (1) 3.0 0.5 (3) 1.5 0.4 4.5 1.6 (2)
2SD2212
71.10 KB
Medium power transistor.
2SD2212 / 2SD2143 / 2SD1866 / 2SD2397
Transistors
Medium Power Transistor (Motor, Relay drive) (60±10V, 2A)
2SD2212 / 2SD2143 / 2SD1866 / 2SD2397
!Fe.
📁 Related Datasheet
2SD221 - NPN Transistor
(Sanken)
.
2SD2210 - Silicon NPN epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistor
2SD2210
Silicon NPN epitaxial planer type
For low-voltage output amplification For muting For DC-DC converter
Unit: mm
4.5±0.1 1.6±0.2
1.
2SD2211 - Power Transistor
(Rohm)
2SD2211 / 2SD1918 / 2SD1857A
Transistors
Power Transistor (160V , 1.5A)
2SD2211 / 2SD1918 / 2SD1857A
Features 1) High breakdown voltage.(BVCEO = 160.
2SD2213 - Silicon NPN Transistor
(Hitachi Semiconductor)
2SD2213
Silicon NPN Epitaxial, Darlington
Application
Low frequency power amplifier
Outline
TO-92MOD
2
3
ID 15 kΩ (Typ) 0.5 Ω (Typ) 1
1. Emitter .
2SD2215 - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SD2215, 2SD2215A
Silicon NPN triple diffusion planar type
For power amplification
7.0±0.3 3.0±0.2 3.5±0.2
Unit: mm
s Features
q .
2SD2215A - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SD2215, 2SD2215A
Silicon NPN triple diffusion planar type
For power amplification
7.0±0.3 3.0±0.2 3.5±0.2
Unit: mm
s Features
q .
2SD2216 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD2216
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB1462
1.6±0.15
Unit: mm
s Features
q q q
0.4
0..
2SD2217 - NPN SILICON EPITAXIAL TRANSISTOR
(NEC)
DATA SHEET
DARLINGTON POWER TRANSISTOR
2SD2217
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPE.
