Part number:
2SK2103
Manufacturer:
File Size:
127.68 KB
Description:
Small switching transistors.
* 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FAbsolute maximum ratings (Ta = 25_C) FPackaging specific
2SK2103
127.68 KB
Small switching transistors.
📁 Related Datasheet
2SK210 - N-Channel MOSFET
(Toshiba Semiconductor)
2SK210
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK210
FM Tuner Applications VHF Band Amplifier Applications
• • • High power .
2SK2100-01MR - Power MOSFET
(Fuji Electric)
.
2SK2101-01MR - N-channel MOS-FET
(Fuji Electric)
2SK2101-01MR
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran.
2SK2108 - N-Channel Silicon MOSFET
(Sanyo Semicon Device)
Ordering number:ENN4602A
N-Channel Silicon MOSFET
2SK2108
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed swi.
2SK2108 - N-Channel Mosfet Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK2108
DESCRIPTION ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 250V(Min) ·Fast Switching Speed ·M.
2SK2109 - N-Channel MOSFET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2109
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK2109 is a N-channel MOS FET of a vertical type and.
2SK211 - Silicon N-Channel MOSFET
(Toshiba Semiconductor)
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK211
2SK211
FM Tuner Applications VHF Band Amplifier Applications
Unit: mm
• Low.
2SK211 - N-channel MOSFET
(Xiao sheng Elctronic)
Silicon N Channel Junction FETs
LH03 series of products interconvertible
2SK211
Xiaosheng
D Symbol
Applications
For charge sensor, meter amplifier c.
