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2SK2109 - N-Channel MOSFET

2SK2109 Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2109 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2109 is a N-channel MOS FET of a vertical type and.

2SK2109 Features

* Low ON resistance RDS(on) = 1.0 Ω MAX. @VGS = 4.0 V, ID = 0.3 A
* High switching speed ton + toff < 100 ns
* Low parasitic capacitance 0.42 0.47 ±0.06 1.5 ±0.06 3.0 0.41+0.03
* 0.05 EQUIVALENT CIRCUIT Drain (D) Gate (G) Gate protection diode Source (S) Internal

2SK2109 Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

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Datasheet Details

Part number
2SK2109
Manufacturer
NEC
File Size
58.68 KB
Datasheet
2SK2109_NEC.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET NEC
NEC 2SK2109-like datasheet