Datasheet Details
- Part number
- 2SK2109
- Manufacturer
- NEC
- File Size
- 58.68 KB
- Datasheet
- 2SK2109_NEC.pdf
- Description
- N-Channel MOSFET
2SK2109 Description
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2109 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2109 is a N-channel MOS FET of a vertical type and.
2SK2109 Features
* Low ON resistance RDS(on) = 1.0 Ω MAX. @VGS = 4.0 V, ID = 0.3 A
* High switching speed ton + toff < 100 ns
* Low parasitic capacitance
0.42 0.47 ±0.06 1.5 ±0.06 3.0
0.41+0.03
* 0.05
EQUIVALENT CIRCUIT
Drain (D)
Gate (G) Gate protection diode Source (S)
Internal
2SK2109 Applications
* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic
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