2SK2112 Datasheet - NEC

2SK2112 N-Channel MOSFET

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2112 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2112 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators, such as motors and DC/DC converters. PACKAGE DIMENSIONS (in mm) 4.5 ± 0.1 1.6 ± 0.2 2.5 ± 0.1 4.0 ± 0.25 1.5 ± 0.1 0.8 MIN. S 0.42 ±0.06 D.

2SK2112 Features

* Low ON resistance RDS(on) = 1.2 Ω MAX. @VGS = 4.0 V, ID = 0.5 A

* High switching speed ton + toff < 100 ns

* Low parasitic capacitance 0.42 0.47 ±0.06 1.5 ±0.06 3.0 0.41+0.03

* 0.05 EQUIVALENT CIRCUIT Drain (D) Gate (G) Gate protection diode Source (S) Marking: N

2SK2112_NEC.pdf