* Low ON resistance RDS(on) = 1.2 Ω MAX. @VGS = 4.0 V, ID = 0.5 A
* High switching speed ton + toff < 100 ns
* Low parasitic capacitance 0.42 0.47 ±0.06 1.5 ±0.06 3.0 0.41+0.03
* 0.05 EQUIVALENT CIRCUIT Drain (D) Gate (G) Gate protection diode Source (S) Marking: N
2SK2112
NEC
59.38 KB
N-channel mosfet.
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2112
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK2112 is a N-channel MOS FET of a vertical type and.
📁 Related Datasheet
2SK211 - Silicon N-Channel MOSFET
(Toshiba Semiconductor)
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK211
2SK211
FM Tuner Applications VHF Band Amplifier Applications
Unit: mm
• Low.
2SK211 - N-channel MOSFET
(Xiao sheng Elctronic)
Silicon N Channel Junction FETs
LH03 series of products interconvertible
2SK211
Xiaosheng
D Symbol
Applications
For charge sensor, meter amplifier c.
2SK2110 - N-Channel MOSFET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2110
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK2110 is a N-channel MOS FET of a vertical type and.
2SK2111 - N-Channel MOSFET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2111
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK2111 is a N-channel MOS FET of a vertical type and.
2SK2111 - MOS Field Effect Transistor
(Kexin)
SMD Type
MOS Field Effect Transistor 2SK2111
MOSFICET
Features
Low on-resistance RDS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A High switching speed
SOT-89
4.5.
2SK2111-HF - N-Channel MOSFET
(Kexin)
SMD Type
N-Channel MOSFET 2SK2111-HF
MOSFET
■ Features
● VDS (V) = 60V ● ID = 1 A
Drain (D)
● RDS(ON) ＜ 0.45Ω (VGS = 10V) ● RDS(ON) ＜ 0.6Ω (VGS .
2SK2114 - Silicon N-Channel MOSFET
(Hitachi Semiconductor)
2SK2114, 2SK2115
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low driv.
2SK2114 - Silicon N-Channel MOSFET
(Renesas)
2SK2114
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No .
