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2SK2114, 2SK2115
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator
Outline
TO-220CFM
D G
12 3
1. Gate 2. Drain 3. Source
S
2SK2114, 2SK2115
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK2114 2SK2115 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.