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2SK2118 - Silicon N-Channel MOSFET

Datasheet Summary

Features

  • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator, DC-DC converter,Motor Control Outline TO-220CFM D G 12 3 1. Gate 2. Drain 3. Source S 2SK2118 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW.

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Datasheet Details

Part number 2SK2118
Manufacturer Hitachi Semiconductor
File Size 29.61 KB
Description Silicon N-Channel MOSFET
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2SK2118 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator, DC-DC converter,Motor Control Outline TO-220CFM D G 12 3 1. Gate 2. Drain 3. Source S 2SK2118 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.
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