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2SK2115 - Silicon N-Channel MOSFET

Download the 2SK2115 datasheet PDF. This datasheet also covers the 2SK2114 variant, as both devices belong to the same silicon n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • No secondary breakdown.
  • Suitable for Switching regulator Outline TO-220CFM D 12 3 1. Gate G 2. Drain 3. Source S 2SK2114, 2SK2115 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2114 2SK2115 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. P.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK2114_HitachiSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SK2115 N-Channel MOSFET Transistor Inchange Semiconductor
2SK211 Silicon N-Channel MOSFET Toshiba Semiconductor
2SK211 N-channel MOSFET Xiao sheng Elctronic
2SK2110 N-Channel MOSFET NEC
2SK2111 N-Channel MOSFET NEC

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK2114 Silicon N-Channel MOSFET
2SK2116 Silicon N-Channel MOSFET
2SK2117 Silicon N-Channel MOSFET
2SK2118 Silicon N-Channel MOSFET
2SK213 Silicon N-Channel MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for Switching regulator Outline TO-220CFM D 12 3 1. Gate G 2. Drain 3. Source S 2SK2114, 2SK2115 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2114 2SK2115 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.