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2SK2110 - N-CHANNEL MOSFET

General Description

The 2SK2110 is a N-channel MOSFET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V.

Key Features

  • Low on-state resistance RDS(on) = 1.5 Ω MAX. (VGS = 4.0 V, ID = 0.3 A).
  • High switching speed ton + toff < 100 ns.
  • Low parasitic capacitance.

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Datasheet Details

Part number 2SK2110
Manufacturer Renesas
File Size 223.71 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet 2SK2110 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2110 N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING DESCRIPTION The 2SK2110 is a N-channel MOSFET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low on-state resistance and superb switching characteristics and is ideal for driving the actuators, such as motors and DC/DC converters. FEATURES • Low on-state resistance RDS(on) = 1.5 Ω MAX. (VGS = 4.0 V, ID = 0.3 A) • High switching speed ton + toff < 100 ns • Low parasitic capacitance ORDERING INFORMATION PART NUMBER 2SK2110 Marking: NT PACKAGE SC-62 (Power Mini Mold) PACKAGE DRAWING (Unit: mm) 4.5 ±0.1 1.6 ±0.2 1.5 ±0.1 2.5 ±0.1 4.0 ±0.25 1 0.42 ±0.06 2 3 0.42 ±0.06 0.47 ±0.06 1.5 TYP. 3.0 TYP. 0.8 MIN.