2SK2112
2SK2112 is N-CHANNEL MOSFET manufactured by Renesas.
FEATURES
- Low ON resistance
RDS(on) = 1.2 Ω MAX. @VGS = 4.0 V, ID = 0.5 A
- High switching speed ton + toff < 100 ns
- Low parasitic capacitance
PACKAGE DIMENSIONS (in mm)
4.5 ± 0.1 1.6 ± 0.2
1.5 ± 0.1
0.8 MIN. 2.5 ± 0.1
4.0 ± 0.25
0.42 ±0.06 1.5
0.42 0.47 ±0.06 ±0.06
0.41+- 00..0053
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Internal diode
Gate protection diode
Source (S)
PIN CONNECTIONS S: Source D: Drain G: Gate
Marking: NV
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse)
Total Power Dissipation Channel Temperature Storage Temperature
SYMBOL VDSS VGSS ID(DC) ID(pulse)
PT Tch Tstg
VGS = 0 VDS = 0
TEST CONDITIONS
PW ≤ 10 ms, Duty cycle ≤ 50 %
16 cm2 × 0.7 mm, ceramic substrate used
RATING 100 ±20 ±1.0 ±2.0
2.0 150
- 55 to +150
UNIT V V A A
W ˚C ˚C
Document No. D11232EJ2V0DS00 (2nd edition) Date Published June 1996 P Printed in Japan
ELECTRICAL CHARACTERISTICS (TA = 25...
