2SK2112
2SK2112 is N-Channel MOSFET manufactured by NEC.
FEATURES
- Low ON resistance RDS(on) = 1.2 Ω MAX. @VGS = 4.0 V, ID = 0.5 A
- High switching speed ton + toff < 100 ns
- Low parasitic capacitance
0.42 0.47 ±0.06 1.5 ±0.06 3.0
0.41+0.03
- 0.05
EQUIVALENT CIRCUIT
Drain (D)
Gate (G) Gate protection diode Source (S) Marking: NV
Internal diode PIN CONNECTIONS S: Source D: Drain G: Gate
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) SYMBOL VDSS VGSS ID(DC) ID(pulse) PW ≤ 10 ms, Duty cycle ≤ 50 % 16 cm2 × 0.7 mm, ceramic substrate used VGS = 0 VDS = 0 TEST CONDITIONS RATING 100 ± 20 ± 1.0 ± 2.0 UNIT V V A A
Total Power Dissipation Channel Temperature Storage Temperature
PT Tch Tstg
2.0 150
- 55 to +150
W ˚C ˚C
Document No. D11232EJ2V0DS00 (2nd edition) Date Published June 1996 P Printed in Japan
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER Drain Cut-Off Current Gate Leakage Current Gate Cut-Off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) |yfs| RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf VDD = 25 V, ID = 0.5 A VGS(on) = 10 V, RG = 10 Ω RL = 50 Ω TEST CONDITIONS VDS = 100 V, VGS = 0 VGS = ± 20 V, VDS = 0 VDS = 10 V, ID = 1 m A VDS = 10 V, ID = 0.5 A VGS = 4.0 V, ID =0.5 A VGS = 10 V, ID = 0.5 A VDS = 10 V, VGS = 0, f = 1.0 MHz 0.8 0.4 0.58 0.50 178 59 16 2.9 1.7 60 15 1.2 0.8 1.5 MIN. TYP. MAX. 1.0 ± 10 2.0 UNIT
µA µA
V S Ω Ω p F p F p F ns ns ns ns
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 10 5 ID
- Drain Current
- A 2 1 0.5
FORWARD BIAS SAFE OPERATING AREA
80 d T
- Derating Factor
- %
1 m s m s
=
0m
0.2 Single pulse 30 60 90 120 150 0.1 1 2 5 10 20...
