Datasheet4U Logo Datasheet4U.com

2SK2112 - N-Channel MOSFET

Key Features

  • Low ON resistance RDS(on) = 1.2 Ω MAX. @VGS = 4.0 V, ID = 0.5 A.
  • High switching speed ton + toff < 100 ns.
  • Low parasitic capacitance 0.42 0.47 ±0.06 1.5 ±0.06 3.0 0.41+0.03.
  • 0.05.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK211 Silicon N-Channel MOSFET Toshiba Semiconductor
2SK211 N-channel MOSFET Xiao sheng Elctronic
2SK2111 MOS Field Effect Transistor Kexin
2SK2111-HF N-Channel MOSFET Kexin
2SK2114 Silicon N-Channel MOSFET Hitachi Semiconductor

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK2110 N-Channel MOSFET
2SK2111 N-Channel MOSFET
2SK2109 N-Channel MOSFET
2SK2131 SWITCHING N-CHANNEL POWER MOSFET
2SK2132 SWITCHING N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2112 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2112 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators, such as motors and DC/DC converters. PACKAGE DIMENSIONS (in mm) 4.5 ± 0.1 1.6 ± 0.2 2.5 ± 0.1 4.0 ± 0.25 1.5 ± 0.1 0.8 MIN. S 0.42 ±0.06 D G FEATURES • Low ON resistance RDS(on) = 1.2 Ω MAX. @VGS = 4.0 V, ID = 0.5 A • High switching speed ton + toff < 100 ns • Low parasitic capacitance 0.42 0.47 ±0.06 1.5 ±0.06 3.0 0.41+0.03 –0.