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2SK2110 - N-Channel MOSFET

Key Features

  • Low ON resistance RDS(on) = 1.5 Ω MAX. @VGS = 4.0 V, ID = 0.3 A.
  • High switching speed ton + toff < 100 ns.
  • Low parasitic capacitance 0.42 0.47 ±0.06 1.5 ±0.06 3.0 0.41+0.03.
  • 0.05.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2110 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2110 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators, such as motors and DC/DC converters. PACKAGE DIMENSIONS (in mm) 4.5 ± 0.1 1.6 ± 0.2 2.5 ± 0.1 4.0 ± 0.25 1.5 ± 0.1 0.8 MIN. S 0.42 ±0.06 D G FEATURES • Low ON resistance RDS(on) = 1.5 Ω MAX. @VGS = 4.0 V, ID = 0.3 A • High switching speed ton + toff < 100 ns • Low parasitic capacitance 0.42 0.47 ±0.06 1.5 ±0.06 3.0 0.41+0.03 –0.