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2SK2112 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 100V.
  • ID = 1 A.
  • RDS(ON) ＜ 0.8Ω (VGS = 10V).
  • RDS(ON) ＜ 1.2Ω (VGS = 4V) Drain (D) Gate (G) Gate protection diode Internal diode Source (S) 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Junction Temperature Storage Temperature Range Note.1: PW ≤ 10ms, Duty Cycle ≤ 50% Symbol VDS VGS ID IDM PD TJ Tst.

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SMD Type N-Channel MOSFET 2SK2112 MOSFET 1.70 0.1 ■ Features ● VDS (V) = 100V ● ID = 1 A ● RDS(ON) ＜ 0.8Ω (VGS = 10V) ● RDS(ON) ＜ 1.2Ω (VGS = 4V) Drain (D) Gate (G) Gate protection diode Internal diode Source (S) 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Junction Temperature Storage Temperature Range Note.