2SK2112 Datasheet | Kexin Semiconductor

Features - VDS (V) = 100V - ID = 1 A - RDS(ON) ＜ 0.8Ω (VGS = 10V) - RDS(ON) ＜ 1.2Ω (VGS = 4V) Drain (D) Gate (G) Gate protection diode Internal diode Source (S) 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Junction Temperature Storage Temperature Range Note.1: PW ≤ 10ms, Duty Cycle ≤ 50% Symbol VDS VGS ID IDM PD TJ Tstg Rating 100 ±20 1 2 2 150 -55 to 150 - Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Cutt-off Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Symbol VDSS IDSS IGSS VGS(off) RDS(On) g FS Ciss Coss Crss td(on) tr td(off) tf Test Conditions ID=250μA, VGS=0V VDS=100V, VGS=0V VDS=0V, VGS=±20V VDS=10V , ID=1m A VGS=10V, ID=0.5A VGS=4V, ID=0.5A VDS=10V, ID=0.5A VGS=0V, VDS=10V, f=1MHz VGS(on)=10V, VDS=25V, ID=0.5A,RL=50Ω,RG=10Ω Unit V A W ℃ Min Typ Max Unit 1 u A ±10 u A 0.8 Ω 59 p F 1.7...