Datasheet4U Logo Datasheet4U.com

2SK2111-HF - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 60V.
  • ID = 1 A Drain (D).
  • RDS(ON) ＜ 0.45Ω (VGS = 10V).
  • RDS(ON) ＜ 0.6Ω (VGS = 4V).
  • Pb.
  • Free Package May be Available. Gate (G) Gate protection Internal diode diode Source (S) The G.
  • Suffix Denotes a Pb.
  • Free Lead Finish 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipa.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK2111 N-Channel MOSFET NEC
2SK211 Silicon N-Channel MOSFET Toshiba Semiconductor
2SK211 N-channel MOSFET Xiao sheng Elctronic
2SK2110 N-Channel MOSFET NEC
2SK2112 N-Channel MOSFET NEC

Other Datasheets by Kexin Semiconductor

Part Number Description
2SK2111 MOS Field Effect Transistor
2SK2133 MOS Field Effect Transistor
2SK2159 N-Channel MOSFET
2SK2033 N-Channel MOSFET
2SK2059S Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type N-Channel MOSFET 2SK2111-HF MOSFET ■ Features ● VDS (V) = 60V ● ID = 1 A Drain (D) ● RDS(ON) ＜ 0.45Ω (VGS = 10V) ● RDS(ON) ＜ 0.6Ω (VGS = 4V) ● Pb−Free Package May be Available. Gate (G) Gate protection Internal diode diode Source (S) The G−Suffix Denotes a Pb−Free Lead Finish 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Junction Temperature Storage Temperature Range Note.