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Silicon N Channel Junction FETs
LH03 series of products interconvertible
2SK211
Xiaosheng
D Symbol
Applications
For charge sensor, meter amplifier circuit, rheostat , chopper and gain controller for AGC, electronic switch.
SG Packag
Electrical characteristics (Ta=25℃)
1-Drain 2-Gate 3-Source SOT-23
Parameter
Symbl
Conditions
min typ max unit
Drain to Source Voltage
BVDS IDS= 1uA
20
V
Gate to Drain ( Source) Voltage VGD(S) IGS= -1uA
-20
V
Gate to Source Cut-off Voltage VGS(off) VDS=10V IDS=1uA -0.3
-2.5 V
Gate to Source Reverse Current IGSS VDS=0VVGS=- 10V
-1.0 nA
Saturation Drain Current
IDSS VDS=0V VGS=0V 1.2
12 mA
Forward transfer admittance
|Yfs| VDS=10V VGS=0V 2.5
mS
f=1KC
Classifications
Marking Rank (LH) Marking Rank IDSS Classification (mA )
Y O 1.2~3.
2SK211 Datasheet