• Part: 2SK212
  • Description: N-channel MOSFET
  • Manufacturer: Xiao sheng Elctronic
  • Size: 87.73 KB
Download 2SK212 Datasheet PDF

Datasheet Summary

Silicon N Channel Junction FETs LH03 series of products interconvertible Xiaosheng D Symbol Applications For charge sensor, meter amplifier circuit, rheostat , chopper and gain controller for AGC, electronic switch. FM/VHF tuners in car radios Electrical characteristics (Ta=25℃) Packag 1-Drain 2-Source 3-Gate TO-92 or TO-92s Parameter Drain to Source Voltage Gate to Drain ( Source) Voltage Gate to Source Cut-off Voltage Gate to Source Reverse Current Saturation Drain Current Forward transfer admittance Symbl Conditions min typ max unit BVDS IDS= 1uA VGD(S) IGS= -1uA -20 VGS(off) VDS=10V IDS=1uA -0.3 -2.5 V IGSS VDS=0VVGS=-10V -1.0 nA IDSS VDS=10V VGS=0V...