BA12003B Datasheet - Rohm

BA12003B Darlinton Transistor Array

BA12003B Features

* Built-in 7 circuits

* High output break down voltage

* High DC output current gain

* Built-in input resistor to limit base current

* Built-in output surge absorption clamp diode Key Specifications

* Output break down voltage： VCE=60V(max)

* Output current： Io=500mA

Datasheet Details

BA12003B

0.96 MB

Darlinton transistor array.

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BA12003B BA12003B Darlinton Transistor Array Rohm

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