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R5007ANX - 10V Drive Nch MOSFET

Key Features

  • 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuits can be simple. 6) Parallel use is easy.

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Datasheet Details

Part number R5007ANX
Manufacturer ROHM
File Size 277.33 KB
Description 10V Drive Nch MOSFET
Datasheet download datasheet R5007ANX Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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10V Drive Nch MOSFET R5007ANX Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching Dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 15.0 12.0 8.0 2.5 1.3 1.2 14.0 0.8 (1)Base (2)Collector (3)Emitter 2.54 (1) (2) (3) 2.54 0.75 2.