R8002ANX - Power MOSFET

Rohm

Datasheet Details

1) Low on-resistance. 800V 4.3 2A 36W.
Outline TO-220FM.
Inner circuit (1) (2) (3) (2) 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. (1) (1) Gate (2) Drain.
1 (3) Source.
1 Body Diode 5) Parallel use is easy. (3) 6) Pb-free lead plating ; RoHS compliant.
Packaging specifications Packaging Bulk.

📁 R8002ANX Similar Datasheet

Other Datasheets by Rohm

Published: Apr 3, 2012 |