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R8005ANX N-Channel MOSFET

R8005ANX Description

isc N-Channel MOSFET Transistor *.

R8005ANX Features

* With TO-220 packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

R8005ANX Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 5 2.4 20 PD Total Dissipation 51 Tj Operati

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Datasheet Details

Part number
R8005ANX
Manufacturer
INCHANGE
File Size
251.15 KB
Datasheet
R8005ANX-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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