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R8008ANJ

N-Channel MOSFET

R8008ANJ Features

* Drain Current

* ID= 8A@ TC=25℃

* Drain Source Voltage- : VDSS=800V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 1.03Ω(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Designed for use i

R8008ANJ General Description


*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Pluse.

R8008ANJ Datasheet (250.48 KB)

Preview of R8008ANJ PDF

Datasheet Details

Part number:

R8008ANJ

Manufacturer:

INCHANGE

File Size:

250.48 KB

Description:

N-channel mosfet.

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TAGS

R8008ANJ N-Channel MOSFET INCHANGE

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