R8010ANX N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor R8010ANX .
Designed for use in switch mode power supplies and general purpose applications.

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Datasheet Specifications

Part number: R8010ANX
Manufacturer: INCHANGE
File Size: 247.43 KB
Datasheet: R8010ANX-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Drain Current
* ID= 10A@ TC=25℃
* Drain Source Voltage- : VDSS=800V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.56Ω(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 40 W TJ Max. Operating Junction Temperatu

R8010ANX Distributors

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R8010ANX N-Channel MOSFET INCHANGE

INCHANGE R8010ANX-like datasheet