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R8010ANX

N-Channel MOSFET

R8010ANX Features

* Drain Current

* ID= 10A@ TC=25℃

* Drain Source Voltage- : VDSS=800V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 0.56Ω(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Designed for use

R8010ANX General Description


*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Plus.

R8010ANX Datasheet (247.43 KB)

Preview of R8010ANX PDF

Datasheet Details

Part number:

R8010ANX

Manufacturer:

INCHANGE

File Size:

247.43 KB

Description:

N-channel mosfet.

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R8010ANX N-Channel MOSFET INCHANGE

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