R80186
AMD
3.71MB
High integration 16 bit microprocessors.
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R80186 - High Integration 16 Bit Microprocessors
(Intel)
.
R8010ANX - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
R8010ANX
FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS=800V(Min) ·Static Drain-Source On-Re.
R8010ANX - Power MOSFET
(ROHM)
R8010ANX
Nch 800V 10A Power MOSFET
Datasheet
lOutline
VDSS RDS(on) (Max.)
800V 0.56W
TO-220FM
ID PD
lFeatures 1) Low on-resistance.
10A 40W
lI.
R8001CND - Power MOSFET
(ROHM)
R8001CND
Nch 800V 1A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
800V 8.7Ω ±1A 36W
lFeatures
1) Low on-resistance. 2) Fast switching spee.
R8002ANJ - Power MOSFET
(ROHM)
R8002ANJ
Nch 800V 2A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
800V 4.3Ω ±2A 62W
lFeatures
1) Low on-resistance. 2) Fast switching speed. 3) Parallel.
R8002ANJ - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
R8002ANJ
FEATURES ·Drain Current –ID= 24A@ TC=25℃ ·Drain Source Voltage-
: VDSS=800V(Min) ·Static Drain-Source On-Re.
R8002ANJFRG - Power MOSFET
(ROHM)
R8002ANJ FRG
Nch 800V 2A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
800V 4.3Ω ±2A 62W
lFeatures
1) Low on-resistance. 2) Fast switching .
R8002ANX - Power MOSFET
(Rohm)
R8002ANX
Nch 800V 2A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
Features 1) Low on-resistance.
800V 4.3 2A 36W
Outline
TO-220FM
Inner c.
R8002ANX - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
R8002ANX
FEATURES ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage-
: VDSS=800V(Min) ·Static Drain-Source On-Res.
R8002CND - Power MOSFET
(ROHM)
R8002CND
Nch 800V 2A Power MOSFET
Datasheet
NotNeRewcDoemsimgennsded for
VDSS RDS(on)(Max.)
ID PD
800V 4.3Ω ±2A 69W
lFeatures
1) Low on-resi.