R8008ANX - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	R8008ANX
Manufacturer	INCHANGE
File Size	247.35 KB
Description	N-Channel MOSFET
Datasheet	R8008ANX-INCHANGE.pdf

R8008ANX Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Pluse 32 A PD Total Dissipation @TC=25℃ 66 W TJ Max.Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resist

Features

Drain Current.
ID= 8A@ TC=25℃.
Drain Source Voltage- : VDSS=800V(Min).
Static Drain-Source On-Resistance : RDS(on) = 1.03Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Mar 1, 2021 |